SS36 R6 Tech Spezifikatioune
Taiwan Semiconductor Corporation - SS36 R6 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - SS36 R6
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 750 mV @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 60 V | |
| Technologie | Schottky | |
| Supplier Device Package | DO-214AB (SMC) | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-214AB, SMC | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Surface Mount | |
| Aktuell - Reverse Leakage @ Vr | 500 µA @ 60 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | - |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation SS36 R6.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SS36 R6 | SS36 R7 | SS35-E3/57T | SS36-E3/9AT |
| Hiersteller | Taiwan Semiconductor Corporation | Taiwan Semiconductor Corporation | Vishay General Semiconductor - Diodes Division | Vishay General Semiconductor - Diodes Division |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Capacitance @ Vr, F. | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC | DO-214AB, SMC |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 3A | 3A |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Serie | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Voltage - Viru (Vf) (Max) @ Wann | 750 mV @ 3 A | 750 mV @ 3 A | 750 mV @ 3 A | 750 mV @ 3 A |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Aktuell - Reverse Leakage @ Vr | 500 µA @ 60 V | 500 µA @ 60 V | 500 µA @ 50 V | 500 µA @ 60 V |
| Voltage - DC Reverse (Vr) (Max) | 60 V | 60 V | 50 V | 60 V |
| Supplier Device Package | DO-214AB (SMC) | DO-214AB (SMC) | DO-214AB (SMC) | DO-214AB (SMC) |
Eroflueden SS36 R6 PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir SS36 R6 - Taiwan Semiconductor Corporation.
SS36-E3/9CTElectro-Films (EFI) / Vishay
SS351ATHoneywell Sensing and Productivity SolutionsMAGNETIC SWITCH OMNIPOL SOT23-3SS35-1HE3/9ATElectro-Films (EFI) / VishaySS35-1GSI TechnologySS36 R7Taiwan Semiconductor CorporationDIODE SCHOTTKY 60V 3A DO214ABSS35-E3/57TVishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 50V 3A DO214ABSS36-E3Electro-Films (EFI) / Vishay
SS36 SR360 SMATAEC Product (Toshiba Electronic Devices and StoraSS36-E3/61TElectro-Films (EFI) / VishaySS35BFPHYSS36 2K/RSS36-E3/9ATVishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 60V 3A DO214AB
SS3529027Murata Power SolutionsSS36-E3/57TVishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 60V 3A DO214ABSS35-1/9ATElectro-Films (EFI) / VishaySS36-E357TElectro-Films (EFI) / VishaySS36-E3/57T(S6)JXND/VISHAYMAS
SS34_NLFairchild (onsemi)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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